Effect of Pressure and Temperature on Preparing PZT Films |
| Sharif Musameh |
| Physics Department, Faculty of Science, An-Najah National University, Nablus, Palestine. |
| Received : 09-05-2000 , Accepted : 02-01-2002 |
| Language: English |
Abstract |
Ferroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) textured PZT films could be grown with careful selection of ablation conditions which are: the oxygen pressure is 300 mT, substrate temperature is 605 C and the ablation time is 16 minutes. |
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| Full Text |
Tuesday, February 2, 2010
Effect of Pressure and Temperature on Preparing PZT Films
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