The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method |
| Mousa Al- Hasan |
| Department of Physics, An-Najah N. University, presented at the second conference on Physics of condensed Matter, Amman, 20-24 March, 1989 and updated 1993. |
| Received : 00-00-0000 , Accepted : 00-00-0000 |
| Language: English |
Abstract |
The calculation of the electronic structure of Gax In 1-x As and In Asx P1-x alloys using the recursion method is reported. A five-orbitals, sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states is calculated for Ca, In, As and P-sites in a cluster of 216 atoms. The results are in good agreement with other calculations. |
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Monday, February 1, 2010
The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method
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